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| STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STBV32 STBV32-AP Marking BV32 BV32 Package / Shipment TO-92 / Bulk TO-92 / Ammopack n n n n HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED COMPACT FLUORESCENT LAMPS (CFLS) TO-92 Bulk TO-92 Ammopack APPLICATIONS: n DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The STBV series is designed for use in Compact Fluorescent Lamps. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB < 0.5 A, tp < 10 ms) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tamb = 25 C Storage Temperature Max. Operating Junction Temperature Value 700 400 V(BR)EBO 1 3 0.5 1.5 1.1 -65 to 150 150 Unit V V V A A A A W C C April 2003 1/8 STBV32 THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 112 C/W ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) Symbol ICEV V(BR)EBO Parameter Collector Cut-off Current (VBE = -1.5 V) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time VCE = 700 V VCE = 700 V IE = 10 mA Test Conditions Tj = 125 C 9 Min. Typ. Max. 1 5 18 Unit mA mA V VCEO(sus)* IC = 10 mA 400 V VCE(sat)* IC = 0.5 A IC = 1 A IC = 1.5 A IC = 0.5 A IC = 1 A IC = 0.5 A IC = 1 A IC = 1 A IB1 = -IB2 = 200 mA (See Figure 1) IC = 1 A IB1 = 200 mA L = 50 mH (See Figure 2) IB = 100 mA IB = 250 mA IB = 500 mA IB = 100 mA IB = 250 mA VCE = 2 V VCE = 2 V VCC = 125 V tp = 25 s 8 5 0.5 1 1.5 1 1.2 35 25 1 4 0.7 0.8 V V V V V VBE(sat)* hFE* tr ts tf ts s s s s Vclamp = 300 V VBE(off) = -5 V RBB = 0 * Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %. 2/8 STBV32 Safe Operating Area Derating Curve Output characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/8 STBV32 DC Current Gain Inductive Load Switching Times Reverse Biased Safe Operating Area 4/8 STBV32 Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 5/8 STBV32 TO-92 BULK SHIPMENT MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.036 0.016 inch TYP. MAX. 0.195 0.020 0.195 0.155 0.105 0.055 0.610 0.095 0.060 0.022 5 6/8 STBV32 TO-92 AMMOPACK SHIPMENT (Suffix "-AP") MECHANICAL DATA mm. MIN. TYP. MAX. 4.80 3.80 1.60 2.30 0.48 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 16.00 4.00 18.00 6.00 9.00 12.70 6.35 2.54 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 3.00 -1.00 1.00 0.118 -0.039 0.039 0.150 0.157 0.728 0.610 0.630 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.709 0.236 0.354 0.500 0.250 0.100 MIN. inch TYP. MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 7/8 STBV32 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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